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PDF] High performance WSe2 p-MOSFET with intrinsic n-channel based on back- to-back p–n junctions

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WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications - Cheng - 2020 - InfoMat - Wiley Online Library

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Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe2 on graphene

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PDF) WSe2 2D p-type semiconductor-based electronic devices for information technology: Design, preparation, and applications

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